“Virtual IED sensor” at an rf-biased electrode in low-pressure plasma

MA Bogdanova, DV Lopaev, SM Zyryanov… - Physics of …, 2016 - pubs.aip.org
Energy distribution and the flux of the ions coming on a surface are considered as the key-
parameters in anisotropic plasma etching. Since direct ion energy distribution (IED) …

The plasma sheath around planar probes: effects of ion collisions

D Voloshin, T Rakhimova… - Plasma Sources Science …, 2016 - iopscience.iop.org
The 2D numerical model of the ion current collection by a planar probe has been developed
on the basis of a particle in cell with the Monte Carlo collision method for ion motion. This …

Roughness generation during Si etching in Cl2 pulsed plasma

O Mourey, C Petit-Etienne, G Cunge… - Journal of Vacuum …, 2016 - pubs.aip.org
Pulsed plasmas are promising candidates to go beyond limitations of continuous waves'
plasma. However, their interaction with surfaces remains poorly understood. The authors …

Determination of plasma density from data on the ion current to cylindrical and planar probes

DG Voloshin, AN Vasil'eva, AS Kovalev… - Plasma Physics …, 2016 - Springer
To improve probe methods of plasma diagnostics, special probe measurements were
performed and numerical models describing ion transport to a probe with allowance for …

Measuring ion velocity distribution functions through high-aspect ratio holes in inductively coupled plasmas

G Cunge, M Darnon, J Dubois, P Bezard… - Applied Physics …, 2016 - pubs.aip.org
Several issues associated with plasma etching of high aspect ratio structures originate from
the ions' bombardment of the sidewalls of the feature. The off normal angle incident ions are …

Определение плотности плазмы по данным ионного тока на цилиндрический и плоский зонд

ДГ Волошин, АН Васильева, АС Ковалев… - Физика плазмы, 2016 - elibrary.ru
Для развития зондовых методов диагностики плазмы проведены экспериментальные
зондовые измерения и разработаны численные модели транспорта ионов на зонд с …