State‐of‐the‐art all‐silicon sub‐bandgap photodetectors at telecom and datacom wavelengths

M Casalino, G Coppola, RM De La Rue… - Laser & Photonics …, 2016 - Wiley Online Library
Silicon‐based technologies provide an ideal platform for the monolithic integration of
photonics and microelectronics. In this context, a variety of passive and active silicon …

On-chip integrated, silicon–graphene plasmonic Schottky photodetector with high responsivity and avalanche photogain

I Goykhman, U Sassi, B Desiatov, N Mazurski… - Nano …, 2016 - ACS Publications
We report an on-chip integrated metal graphene–silicon plasmonic Schottky photodetector
with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order …

The optical and electrical properties of co-doped black silicon textured by a femtosecond laser and its application to infrared light sensing

XY Yu, ZH Lv, CH Li, X Han, JH Zhao - IEEE Sensors Journal, 2016 - ieeexplore.ieee.org
Co-doped black silicon with sulfur and nitrogen impurities was fabricated by a femtosecond
laser in a mixed atmosphere of N 2 and SF 6. Compared with sulfur-doped black silicon, the …

Slow-light effect in a silicon photonic crystal waveguide as a sub-bandgap photodiode

Y Terada, K Miyasaka, H Ito, T Baba - Optics Letters, 2016 - opg.optica.org
We demonstrate a Si sub-bandgap photodiode in a photonic crystal slow-light waveguide
that operates at telecom wavelengths and can be fabricated using a Ge-free, standard Si …

Wavelength locking of silicon photonics multiplexer for DML-based WDM transmitter

S Grillanda, R Ji, F Morichetti… - Journal of Lightwave …, 2016 - ieeexplore.ieee.org
We present a wavelength locking platform enabling the feedback control of silicon (Si)
microring resonators (MRRs) for the realization of a 4× 10 Gb/s wavelength-division …

Optical autocorrelation performance of silicon wire pin waveguides utilizing the enhanced two-photon absorption

G Cong, M Ohno, Y Maegami, M Okano, K Yamada - Optics Express, 2016 - opg.optica.org
Optical autocorrelation accuracy was for the first time analyzed for the silicon waveguide
based autocorrelators utilizing two-photon absorption (TPA) under various short pulse …

-Photodetectors

J Michel, SJ Koester, J Liu, X Wang… - Handbook of Silicon …, 2016 - taylorfrancis.com
Photodetectors are an integral part of photonics systems. Since photodetectors are critical
for the receivers by converting light into electrical signals, the performance requirements are …

[PDF][PDF] Autocorrelation Operation using Enhanced Two-photon Absorption Induced Photocurrent in Sub-μm Silicon PIN Waveguide

G Cong, M Ohno, Y Maegami, M Okano, K Yamada - confit.atlas.jp
Optical autocorrelation operation using two-photon absorption (TPA) induced photocurrent
in the sub-μm silicon PIN rib waveguide on the 220 nm SOI wafer was for the first time …

[图书][B] Graphene-Boron Nitride Heterostructure Based Optoelectronic Devices for On-Chip Optical Interconnects

Y Gao - 2016 - search.proquest.com
Graphene has emerged as an appealing material for a variety of optoelectronic applications
due to its unique electrical and optical characteristics. In this thesis, I will present recent …