Dopant, composition and carrier profiling for 3D structures
W Vandervorst, C Fleischmann, J Bogdanowicz… - Materials Science in …, 2017 - Elsevier
With the transition from planar to three-dimensional device architectures, devices such as
FinFETs, TFETs and nanowires etc. become omnipresent. This requires the dopant atom …
FinFETs, TFETs and nanowires etc. become omnipresent. This requires the dopant atom …
Scanning Voltage Microscopy for Emerging Electronic and Photonic Devices: Integrating nanotips with a single atom end for SVM
Scanning probe microscopy (SPM) techniques have been developed and deployed to
delineate the internal characteristics of electronic and photonic devices such as doping …
delineate the internal characteristics of electronic and photonic devices such as doping …