Analytical models for GaN-based heterostructure-free normally off fin-shaped field-effect transistor
Analytical models for threshold voltage and subthreshold swing of GaN-based fin-shaped
field-effect transistors (FinFETs) are obtained. Analytical expressions for the drain-induced …
field-effect transistors (FinFETs) are obtained. Analytical expressions for the drain-induced …
Fin and Gate Geometry Effects on the Junctionless Field Effect Transistors
A Bukhtiar, A Nairan, BS Zou - Journal of Nanoelectronics and …, 2017 - ingentaconnect.com
Junctionless transistor (JT) has no doping gradient across the device and possible
alternative for junction based FET. Synopsys TCAD tools used to investigate the different Fin …
alternative for junction based FET. Synopsys TCAD tools used to investigate the different Fin …