The challenges of advanced CMOS process from 2D to 3D
HH Radamson, Y Zhang, X He, H Cui, J Li, J Xiang… - Applied Sciences, 2017 - mdpi.com
The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit
bricks in integrated circuits (ICs) have constantly changed during the past five decades. The …
bricks in integrated circuits (ICs) have constantly changed during the past five decades. The …
Microelectronic method for etching a layer
N Posseme, O Joubert, L Vallier - US Patent 9,570,317, 2017 - Google Patents
(71) Applicants: COMMISSARIAT A L'ENERGIE(Continued) ATOMIQUE ET AUX
ENERGIES(52) US Cl ALTERNATIVES, Paris (FR): CPC. H0IL 21/31116 (2013.01); HOIL …
ENERGIES(52) US Cl ALTERNATIVES, Paris (FR): CPC. H0IL 21/31116 (2013.01); HOIL …
Driving frequency fluctuations in pulsed capacitively coupled plasmas
We report time resolved measurements of the RF current, voltage and complex impedance
for pulsed plasmas through electropositive (Ar) and electronegative (CF 4, O 2) gases and …
for pulsed plasmas through electropositive (Ar) and electronegative (CF 4, O 2) gases and …
Electron-impact-ionization dynamics of
JN Bull, JWL Lee, C Vallance - Physical Review A, 2017 - APS
A detailed understanding of the dissociative electron ionization dynamics of SF 6 is
important in the modeling and tuning of dry-etching plasmas used in the semiconductor …
important in the modeling and tuning of dry-etching plasmas used in the semiconductor …
Experimental and numerical investigations on time-resolved characteristics of pulsed inductively coupled O2/Ar plasmas
C Xue, DQ Wen, W Liu, YR Zhang, F Gao… - Journal of Vacuum …, 2017 - pubs.aip.org
The time-resolved characteristics of pulsed inductively coupled O 2/Ar plasmas have been
investigated in this paper, by means of a Langmuir probe and a global model. The plasma …
investigated in this paper, by means of a Langmuir probe and a global model. The plasma …
Time-resolved spatial distribution measurements of pulse-modulated argon plasmas in an inductively coupled plasma reactor
JH Park, DH Kim, YS Kim… - Plasma Sources Science …, 2017 - iopscience.iop.org
The time variation of the plasma parameters along with their spatial distributions were
measured in pulse-modulated (PM) inductively coupled argon plasma via the phase delay …
measured in pulse-modulated (PM) inductively coupled argon plasma via the phase delay …
[图书][B] Plasma Etching Processes for CMOS Devices Realization
N Posseme - 2017 - books.google.com
Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch
compensation helps to create devices that are smaller than 20 nm. But, with the constant …
compensation helps to create devices that are smaller than 20 nm. But, with the constant …
Modeling of low pressure plasma sources for microelectronics fabrication
Chemically reactive plasmas operating in the 1 mTorr–10 Torr pressure range are widely
used for thin film processing in the semiconductor industry. Plasma modeling has come to …
used for thin film processing in the semiconductor industry. Plasma modeling has come to …
Effect of plasma dissociation on fluorocarbon layers formed under C4F8/Ar pulsed plasma for SiO2 etching
M Matsui, T Usui, T Ono - Japanese Journal of Applied Physics, 2017 - iopscience.iop.org
We investigated the effects of gas pressure on the dissociation of C 4 F 8/Ar plasma and the
formations of fluorocarbon layers on etched materials by SiO 2 etching using pulsed …
formations of fluorocarbon layers on etched materials by SiO 2 etching using pulsed …
Temporal evolution of two-dimensional electron temperature and ion flux on a substrate in a pulsed-power inductively coupled plasma
I Park, DH Kim, KH Kim, CW Chung - Physics of Plasmas, 2017 - pubs.aip.org
The two-dimensional temporal behavior of plasma was investigated at the wafer-level when
applied power was turned on/off, which is one cycle of the pulsed plasma. For the …
applied power was turned on/off, which is one cycle of the pulsed plasma. For the …