Electromodulation spectroscopy of heavy-hole, light-hole, and spin-orbit transitions in GaAsBi layers at hydrostatic pressure
F Dybała, J Kopaczek, M Gladysiewicz… - Applied Physics …, 2017 - pubs.aip.org
GaAsBi layers of various Bi concentrations have been grown by molecular beam epitaxy on
a GaAs substrate and studied by electromodulation spectroscopy (EM). Optical transitions …
a GaAs substrate and studied by electromodulation spectroscopy (EM). Optical transitions …
Electronic structure of wurtzite TlxIn1− xN alloys
MJ Winiarski - Materials Chemistry and Physics, 2017 - Elsevier
The structural and electronic properties of wurtzite Tl x In 1− x N materials have been
investigated from first principles within the density functional theory (DFT). Band structures …
investigated from first principles within the density functional theory (DFT). Band structures …
Polarization resolved photoluminescence in GaAs1− xBix/GaAs quantum wells
MAG Balanta, VO Gordo, ARH Carvalho… - Journal of …, 2017 - Elsevier
We have investigated polarization resolved photoluminescence (PL) of GaAs 1− x Bi x/GaAs
quantum wells (QWs) with different Bi concentrations in the dilute range (x< 2%) using …
quantum wells (QWs) with different Bi concentrations in the dilute range (x< 2%) using …
Localization behavior at bound Bi complex states in
While bismuth-related states are known to localize carriers in GaA s 1-x B ix alloys, the
localization behavior of distinct Bi pair, triplet, and cluster states bound above the valence …
localization behavior of distinct Bi pair, triplet, and cluster states bound above the valence …