Anisotropic lattice distortions in biogenic minerals originated from strong atomic interactions at organic/inorganic interfaces
E Zolotoyabko - Advanced Materials Interfaces, 2017 - Wiley Online Library
In this paper, the atomic structure of biogenic calcium carbonate is comprehensively
reviewed with a focus on structural distinctions between biogenic and abiotic materials. We …
reviewed with a focus on structural distinctions between biogenic and abiotic materials. We …
One-dimensional multiband terahertz graphene photonic crystal filters
Properties of one-dimensional graphene photonic crystals with dual-layer defects are
studied. Results show that two defect modes appear within the gaps, and the defect modes …
studied. Results show that two defect modes appear within the gaps, and the defect modes …
Dynamics of current, charge and mass
B Eisenberg, X Oriols, D Ferry - Computational and Mathematical …, 2017 - degruyter.com
Electricity plays a special role in our lives and life. The dynamics of electrons allow light to
flow through a vacuum. The equations of electron dynamics are nearly exact and apply from …
flow through a vacuum. The equations of electron dynamics are nearly exact and apply from …
Analysis of trap‐assisted tunnelling in asymmetrical underlap 3D‐cylindrical GAA‐TFET based on hetero‐spacer engineering for improved device reliability
A unique design for an asymmetrical underlap (AU) cylindrical‐gate‐all‐around (GAA)‐n‐
tunnel field effect transistor (TFET) based on hetero‐spacer engineering with trap‐assisted …
tunnel field effect transistor (TFET) based on hetero‐spacer engineering with trap‐assisted …
An investigation of ELDRS in different SiGe processes
P Li, C He, H Guo, Q Guo, J Zhang… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Enhanced low dose rate sensitivity (ELDRS) in different process Silicon–Germanium
heterojunction bipolar transistors (SiGe HBTs) is investigated. Low and high dose rate …
heterojunction bipolar transistors (SiGe HBTs) is investigated. Low and high dose rate …
Bunches of misfit dislocations on the onset of relaxation of Si0. 4Ge0. 6/Si (001) epitaxial films revealed by high-resolution x-ray diffraction
V Kaganer, T Ulyanenkova, A Benediktovitch… - Journal of Applied …, 2017 - pubs.aip.org
The experimental x-ray diffraction patterns of a Si 0.4 Ge 0.6/Si (001) epitaxial film with a low
density of misfit dislocations are modeled by the Monte Carlo method. It is shown that an …
density of misfit dislocations are modeled by the Monte Carlo method. It is shown that an …
[HTML][HTML] Metallic nanofilms on single crystal silicon: Growth, properties and applications
NI Plusnin - Modern Electronic Materials, 2017 - Elsevier
The metal–silicon thin-film system is not isostructural and furthermore exhibits pronounced
interdiffusion and chemical reactions. Therefore the growth of metallic films on silicon leads …
interdiffusion and chemical reactions. Therefore the growth of metallic films on silicon leads …
SiGe HBT platforms
JD Cressler - Extreme Environment Electronics, 2017 - taylorfrancis.com
This chapter examines the operation of silicon–germanium (SiGe) heterojunction bipolar
transistors (HBTs) at cryogenic temperatures, at elevated temperatures, and in a radiation …
transistors (HBTs) at cryogenic temperatures, at elevated temperatures, and in a radiation …
The effect of gamma rays on the main static characteristics of SiGe transistors
OV Dvornikov, VL Dziatlau, NN Prokopenko… - Вісник …, 2017 - cyberleninka.ru
The article considers the effect of 60Co gamma rays on the characteristics (the major ones
for the analog ICs) of SiGe npn transistors of SGB25V technology: the voltage across the …
for the analog ICs) of SiGe npn transistors of SGB25V technology: the voltage across the …
[引用][C] Silicon Earth: Introduction to microelectronics and nanotechnology
JD Cressler - 2017 - CRC Press