An energy recovery based low loss resonant gate driver circuit for Silicon Carbide MOSFETs

An overview of advances in high reliability gate driving mechanisms for SiC MOSFETs

N Sakib, M Manjrekar, A Ebong - 2017 IEEE 5th Workshop on …, 2017 - ieeexplore.ieee.org
SiC power devices exhibit low on-resistance and are capable of processing high switching
frequencies at elevated temperatures. When SiC MOSFETs are employed as switch …
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