Atomic layer etching of 3D structures in silicon: Self-limiting and nonideal reactions
Current (and future) microelectronics fabrication requirements place unprecedented
demands on the fidelity of plasma etching. As device features shrink to atomic dimensions …
demands on the fidelity of plasma etching. As device features shrink to atomic dimensions …
[HTML][HTML] Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features
Fabrication of semiconductor devices having three-dimensional (3D) structures places
unprecedented demands on plasma etching processes. Among these demands is the …
unprecedented demands on plasma etching processes. Among these demands is the …
Effects of a chirped bias voltage on ion energy distributions in inductively coupled plasma reactors
SJ Lanham, MJ Kushner - Journal of Applied Physics, 2017 - pubs.aip.org
The metrics for controlling reactive fluxes to wafers for microelectronics processing are
becoming more stringent as feature sizes continue to shrink. Recent strategies for controlling …
becoming more stringent as feature sizes continue to shrink. Recent strategies for controlling …
Study on atomic layer etching of Si in inductively coupled Ar/Cl2 plasmas driven by tailored bias waveforms
MA Xiaoqin, S Zhang, DAI Zhongling… - Plasma Science and …, 2017 - iopscience.iop.org
Plasma atomic layer etching is proposed to attain layer-by-layer etching, as it has atomic-
scale resolution, and can etch monolayer materials. In the etching process, ion energy and …
scale resolution, and can etch monolayer materials. In the etching process, ion energy and …