Excitonic properties of wurtzite InP nanowires grown on silicon substrate

Electronic properties of wurtzite-phase InP nanowires determined by optical and magneto-optical spectroscopy

M De Luca, A Polimeni - Applied Physics Reviews, 2017 - pubs.aip.org
Thanks to their peculiar shape and dimensions, semiconductor nanowires (NWs) are
emerging as building components of novel devices. The presence of wurtzite (WZ) phase in …
被引用次数：26 相关文章 所有 6 个版本

Study of the nucleation and growth of InP nanowires on silicon with gold-indium catalyst

A Mavel, N Chauvin, P Regreny, G Patriarche… - Journal of Crystal …, 2017 - Elsevier
The nucleation and the structural and optical properties of InP nanowires (NWs) grown on Si
(111) by molecular beam epitaxy using the vapor-liquid-solid method with gold-indium …
被引用次数：9 相关文章 所有 4 个版本