L Li, O Leenaerts, X Kong, X Chen, M Zhao… - Nano Research, 2017 - Springer
Quantum spin Hall (QSH) insulators with a large topologically nontrivial bulk gap are crucial for future applications of the QSH effect. Among these, group III–V monolayers and their …
PK Patil, F Ishikawa, S Shimomura - Journal of Alloys and Compounds, 2017 - Elsevier
Abstract Eleven periods of GaAsBi/GaAs multiple quantum wells (MQWs) on (100) GaAs substrates were grown by molecular beam epitaxy (MBE) using the two-substrate …
The influence of the surface step termination on the metal-organic vapor phase epitaxy of GaAs 1− y Bi y was explored by examining the epitaxial layer growth rate, composition, and …
GaAsBi has recently attracted much attention due to its large band gap reduction, a less temperature dependence of the band gap, and the giant spin orbiting properties. The large …