GaAs(1-x)Bix: A Promising Material for Optoelectronics Applications
KK Nagaraja, YA Mityagin, MP Telenkov… - Critical Reviews in …, 2017 - Taylor & Francis
Bismuth alloying with GaAs has promised greater advantages in the realization of more
convenient mid and near IR photonic devices owing to its novel and unique properties. The …
convenient mid and near IR photonic devices owing to its novel and unique properties. The …
Gallium bismuth halide GaBi-X2 (X = I, Br, Cl) monolayers with distorted hexagonal framework: Novel room-temperature quantum spin Hall insulators
Quantum spin Hall (QSH) insulators with a large topologically nontrivial bulk gap are crucial
for future applications of the QSH effect. Among these, group III–V monolayers and their …
for future applications of the QSH effect. Among these, group III–V monolayers and their …
GaAsBi/GaAs MQWs grown by MBE using a two-substrate-temperature technique
PK Patil, F Ishikawa, S Shimomura - Journal of Alloys and Compounds, 2017 - Elsevier
Abstract Eleven periods of GaAsBi/GaAs multiple quantum wells (MQWs) on (100) GaAs
substrates were grown by molecular beam epitaxy (MBE) using the two-substrate …
substrates were grown by molecular beam epitaxy (MBE) using the two-substrate …
Surface kinetics study of metal-organic vapor phase epitaxy of GaAs1− yBiy on offcut and mesa-patterned GaAs substrates
The influence of the surface step termination on the metal-organic vapor phase epitaxy of
GaAs 1− y Bi y was explored by examining the epitaxial layer growth rate, composition, and …
GaAs 1− y Bi y was explored by examining the epitaxial layer growth rate, composition, and …
Optimisation of GaAsBi Based Semiconductors
Z Zhou - 2017 - etheses.whiterose.ac.uk
GaAsBi has recently attracted much attention due to its large band gap reduction, a less
temperature dependence of the band gap, and the giant spin orbiting properties. The large …
temperature dependence of the band gap, and the giant spin orbiting properties. The large …