High aspect ratio titanium nitride trench structures as plasmonic biosensor
E Shkondin, T Repän, O Takayama… - Optical Materials …, 2017 - opg.optica.org
High aspect ratio titanium nitride (TiN) grating structures are fabricated by the combination of
deep reactive ion etching (DRIE) and atomic layer deposition (ALD) techniques. TiN is …
deep reactive ion etching (DRIE) and atomic layer deposition (ALD) techniques. TiN is …
Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device manufacturing
K Shinoda, N Miyoshi, H Kobayashi… - Journal of Physics D …, 2017 - iopscience.iop.org
The demand for precisely controlled etching is increasing as semiconductor device
geometries continue to shrink. To fulfill this demand, cyclic atomic level/layer etching will …
geometries continue to shrink. To fulfill this demand, cyclic atomic level/layer etching will …
[图书][B] Plasma Etching Processes for CMOS Devices Realization
N Posseme - 2017 - books.google.com
Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch
compensation helps to create devices that are smaller than 20 nm. But, with the constant …
compensation helps to create devices that are smaller than 20 nm. But, with the constant …
Benefit of precise control of surface reaction by new patterning technique for small-contact etching with TiN hard mask
M Tabata, A Tsuji, T Katsunuma… - Japanese Journal of …, 2017 - iopscience.iop.org
We introduce state-of-the art small-contact etching by a new patterning technique using
atomic layer etching (ALE) for sub-5 nm technology generation. In small-contact etching, SiO …
atomic layer etching (ALE) for sub-5 nm technology generation. In small-contact etching, SiO …
Thermal cyclic atomic-level etching of nitride films: A novel way for atomic-scale nanofabrication
K Shinoda, N Miyoshi, H Kobayashi… - ECS …, 2017 - iopscience.iop.org
A highly selective, rapid thermal-cyclic atomic-level etching (ALE) process for SiNx films has
been developed. The first step of this process is exposing SiNx to hydrofluorocarbon plasma …
been developed. The first step of this process is exposing SiNx to hydrofluorocarbon plasma …
Fabrication, characterization and integration of resistive random access memories
J Sandrini - 2017 - infoscience.epfl.ch
The functionalities and performances of today's computing systems are increasingly
dependent on the memory block. This phenomenon, also referred as the Von Neumann …
dependent on the memory block. This phenomenon, also referred as the Von Neumann …