Found in many terahertz (THz) and submillimeter-wave systems, GaAs Schottky diodes
continue to be one of the most useful THz devices. As a low-parasitic device that operates …

Highly scaled indium phosphide (InP) heterojunction bipolar transistor (HBT) technologies
have been demonstrated with maximum frequencies of oscillation (f max) of> 1 THz and …

In the last couple of decades, solid-state device technologies, particularly electronic
semiconductor devices, have been greatly advanced and investigated for possible adoption …

Massive multi-core processing has recently attracted significant attention from the research
community as one of the feasible solutions to satisfy constantly growing performance …

Microstrip transitions for wide circuits/wafers are proposed using stub arrays (SAs) and
indented waveguides (IWs). Full-wave analysis is performed to show that the proposed …

We describe bistatic scattering measurements on eight reference targets constructed from Al
2 O 3 grit of various sizes embedded in an absorptive epoxy matrix. These samples' surface …

In this work, the performance of Lg D 22 nm In0: 75Ga0: 25As channel-based high electron
mobility transistor (HEMT) on InP substrate is compared with metamorphic high electron …

In this work, the performance of ${L} _ {{\rm {g}}}= 22$ nm In ${} _ {0.75}{{\rm {Ga}}} _ {0.25} $
As channel-based high electron mobility transistor (HEMT) on InP substrate is compared …

固态等离激元太赫兹波器件正成为微波毫米波电子器件技术和半导体激光器技术向太赫兹波段
发展和融合的重要方向之一. 本综述介绍AlGaN/GaN 异质结高浓度和高迁移率二维电子气中的 …

Carrier frequencies beyond 300 GHz have recently received attention primarily due to the
potential for impressive capacity for future multi-gigabit wireless communication systems. In …