Silicon dioxide and low-k material sputtering in dual frequency inductive discharge by argon ions with energies from 16 to 200 eV
DV Lopaev, TV Rakhimova, AT Rakhimov… - Journal of Physics D …, 2017 - iopscience.iop.org
Thermal and PECVD deposited silicon dioxide and organosilicate low-k materials with
porosity from 24 to 44% and corresponding k values from 2.5 to 2.0 were sputtered in dual …
porosity from 24 to 44% and corresponding k values from 2.5 to 2.0 were sputtered in dual …
Electrical and optical measurements in the early hydrogen discharge of GLAST-III
This work presents the first electrical and optical measurements of the initial phase of
hydrogen discharge in the upgraded spherical tokamak GLAST-III, initiated with electron …
hydrogen discharge in the upgraded spherical tokamak GLAST-III, initiated with electron …