Rapid advances in the semiconductor industry, driven largely by device scaling, are now
approaching fundamental physical limits and face severe power, performance, and cost …

Resistive random access memories (RRAMs) are considered as key enabling components
for a variety of emerging applications due to their capacity to support multiple resistive …

The electrical properties of thin TiO 2 films have recently been extensively exploited with the
aim of enabling a variety of metal-oxide electron devices: unipolar and bipolar …

The switching mechanism of valence change resistive memory devices is widely accepted to
be an ionic movement of oxygen vacancies resulting in a valence change of the metal …

In this paper, we report on an ultraviolet (UV) photodetector based on a pn junction structure
hollow anatase n-TiO 2 nanosphere monolayer film on a p-GaN template. In order to form …

Transition metal oxide thin films have attracted increasing attention due to their potential in
non-volatile resistive random access memory (RRAM) devices, where such thin films are …

The Semiconductor industry is investigating high speed, low power consumption, high-
density memory devices that can retain their information without power supply. Resistive …