Temperature dependence of band gaps in dilute bismides
WM Linhart, R Kudrawiec - Semiconductor Science and …, 2018 - iopscience.iop.org
Abstract Knowledge about the temperature dependence of the fundamental band-gap
energy of semiconductors is very important and constitutes the basis for developing …
energy of semiconductors is very important and constitutes the basis for developing …
[HTML][HTML] Assessing the nature of the distribution of localised states in bulk GaAsBi
A comprehensive assessment of the nature of the distribution of sub band-gap energy states
in bulk GaAsBi is presented using power and temperature dependent photoluminescence …
in bulk GaAsBi is presented using power and temperature dependent photoluminescence …
Exciton localization and structural disorder of GaAs1− xBix/GaAs quantum wells grown by molecular beam epitaxy on (311) B GaAs substrates
GA Prando, VO Gordo, J Puustinen… - Semiconductor …, 2018 - iopscience.iop.org
In this work, we have investigated the structural and optical properties of GaAs (1− x) Bi
x/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311) B …
x/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311) B …
Molecular beam epitaxy of GaAsBi and related quaternary alloys
M Yoshimoto, K Oe - Molecular Beam Epitaxy, 2018 - Elsevier
Molecular beam epitaxy (MBE) growth of GaAs 1− x Bi x and related alloys opens up a new
means for exploiting metastable alloys exhibiting unique properties, such as luminescence …
means for exploiting metastable alloys exhibiting unique properties, such as luminescence …
Optical properties of GaAs1− xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311) B GaAs substrates
In this work, the electronic bandstructure of GaAs 1− x Bi x/GaAs single quantum well (QW)
samples grown by molecular beam epitaxy is investigated by photomodulated reflectance …
samples grown by molecular beam epitaxy is investigated by photomodulated reflectance …
Origin of deep localization in and its consequences for alloy properties
The addition of Bi isoelectronic dopants to GaAs provides an attractive avenue for tailoring
its electronic band structure, yet it also introduces less appealing and very strong hole …
its electronic band structure, yet it also introduces less appealing and very strong hole …
Surface Dimer Engineering and Properties of GaAs (N)(Bi) Alloys
J Occena - 2018 - deepblue.lib.umich.edu
Due to the significant bandgap narrowing induced by dilute fractions of N and Bi in III-V
semiconductors, emerging dilute nitride-bismide semiconductor alloys are of significant …
semiconductors, emerging dilute nitride-bismide semiconductor alloys are of significant …