Growing demand for efficient, high-resolution surface processing has led to the emergence
of a rich variety of plasma-based technologies underpinned by an equally wide range of …

We investigate the parameter optimization for micron-scale etching by Inductive Coupled
Plasma-Deep Reactive Ion Etching (ICP-DRIE) of GaAs/AlGaAs semiconductor …

Provided herein are ALE methods of removing III-V materials such as gallium nitride (GaN)
and related apparatus. In some embodiments, the methods involve exposing the III-V …

Methods and apparatus for etching substrates using self-limiting reactions based on removal
energy thresholds determined by evaluating the material to be etched and the chemistries …

We present an inductively coupled-plasma reactive-ion etching process that simultaneously
provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in …

Тенденции развития современной технологии электронной техники заключаются в
увеличении степени интеграции изделий на поверхности подложек, что связано как с …

We reported a method combining the gas–liquid interface method and inductively coupled
plasma (ICP) to fabricate highly-ordered nanowire arrays on a 2 inch GaAs substrate. A …

This doctoral dissertation focuses on fabrication processes for integrated photonic devices
based on III-V semiconductors. This work covers a range of III-V materials and a variety of …

The combination of nonlinear and integrated photonics enables applications in
telecommunication, metrology, spectroscopy, and quantum information science. Pioneer …

Au cours de ce travail de thèse nous avons conçu, fabriqué et caractérisé des nano-
résonateurs optomécaniques à disques en arséniure de gallium (GaAs), en milieu …