Gallium nitride (GaN), a wide-bandgap III–V semiconductor material with a bandgap
wavelength λ_g= 366 nm (for Wurtzite GaN) and transparency window covering the visible …

We report on the study of the third-order nonlinear optical interactions in In x Ga 1-x As y P 1-
y/InP strip-loaded waveguides. The material composition and waveguide structures were …

This doctoral dissertation focuses on fabrication processes for integrated photonic devices
based on III-V semiconductors. This work covers a range of III-V materials and a variety of …

The rapidly growing Internet services put a higher bandwidth requirement on datacenters. A
low-power and low-cost photonic integrated circuit (PIC), using wavelength division …

Conventional silicon-based electronics have developed dramatically in recent years;
however, their optimum integration level is reaching its limits. To meet the requirements of …

The fundamental limits of electronic systems in communication networks motivated scholars
to think of an alternative approach to overcome problems such as demand for wider …