Tunnel Junctions, as addressed in this review, are conductive, optically transparent
semiconductor layers used to join different semiconductor materials in order to increase …

Abstract DJ GaInP/GaAs SC structure was designed by using analytical solar cell model.
The electrical parameters (J sc, V oc, FF and η) were calculated by determining optimum …

Multijunction solar cells based on III–V compounds are one of the most effective possibilities
to achieve high efficiencies for space and terrestrial applications. In this work, AlInAs: C/InP …

In this work, we have investigated the growth of highly n-doped gallium arsenide (GaAs) and
gallium indium phosphide (GaInP) with tellurium (Te) by metal organic vapor phase epitaxy …

High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping
technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm 2 and …

III-V multijunction solar cells (MJSC) are capable of the highest conversion efficiencies
among all solar cell classifications. These devices are thus of major interest for both …

Diplomityössä luotiin simulaatiomalli korkean hyötysuhteen kolmiliitosaurinkokennolle ja
auringonvaloa keskittävälle aurinkopaneelille Mathworksin Matlab/Simulink-ohjelmiston …

Combining Silicon with III-V materials represents a promising pathway to overcome the≈
29% efficiency limit of a single c-Si solar cell. While the standard approach is to grow III-V …

Solar energy has a huge potential to reduce the world's reliance on fossil fuels. However,
due to the excess current wasted by the Ge sub-cell, the energy conversion efficiency of a …