Molecular beam epitaxy of GaBiAs on (311) B GaAs substrates

[PDF] nottingham.ac.uk

Exciton localization and structural disorder of GaAs1− xBix/GaAs quantum wells grown by molecular beam epitaxy on (311) B GaAs substrates

GA Prando, VO Gordo, J Puustinen… - Semiconductor …, 2018 - iopscience.iop.org
In this work, we have investigated the structural and optical properties of GaAs (1− x) Bi
x/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311) B …
被引用次数：10 相关文章 所有 16 个版本

Molecular beam epitaxy of GaAsBi and related quaternary alloys

M Yoshimoto, K Oe - Molecular Beam Epitaxy, 2018 - Elsevier
Molecular beam epitaxy (MBE) growth of GaAs 1− x Bi x and related alloys opens up a new
means for exploiting metastable alloys exhibiting unique properties, such as luminescence …
被引用次数：15 相关文章 所有 2 个版本
[PDF] worktribe.com

Optical properties of GaAs1− xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311) B GaAs substrates

M Gunes, MO Ukelge, O Donmez, A Erol… - Semiconductor …, 2018 - iopscience.iop.org
In this work, the electronic bandstructure of GaAs 1− x Bi x/GaAs single quantum well (QW)
samples grown by molecular beam epitaxy is investigated by photomodulated reflectance …
被引用次数：9 相关文章 所有 16 个版本