High density H2 and He plasmas: can they be used to treat graphene?
Since graphene and other 2D materials have no bulk, a major issue is their sensitivity to
surface contaminations, and the development of cleaning processes is mandatory. High …
surface contaminations, and the development of cleaning processes is mandatory. High …
Helium plasma modification of Si and Si3N4 thin films for advanced etch processes
V Martirosyan, E Despiau-Pujo, J Dubois… - Journal of Vacuum …, 2018 - pubs.aip.org
To achieve the etching of silicon nitride spacers with a perfect anisotropy and an almost
infinite selectivity, an alternative method consisting of two sequential steps—surface …
infinite selectivity, an alternative method consisting of two sequential steps—surface …
Experimental Study of SiO2 Sputter Etching Process in 13.56 MHz rf-Biased Inductively Coupled Plasma
Inductively coupled plasma (ICP) has been widely used in semiconductor manufacturing,
especially in nanoscale etching and deposition process. It is important to understand the …
especially in nanoscale etching and deposition process. It is important to understand the …