Analytical modelling and analysis of spacer induced shallow source/drain extension junction-less double gate (SDE-JLDG) MOSFET incorporating fringing field effects
S Rai - Journal of Nanoelectronics and Optoelectronics, 2018 - ingentaconnect.com
This paper is an unique attempt to analytically investigate a novel shallow source/drain
extension junctionless double gate (SDE-JLDG) MOSFET. A two dimensional surface …
extension junctionless double gate (SDE-JLDG) MOSFET. A two dimensional surface …