Modeling of gate stack patterning for advanced technology nodes: A review
X Klemenschits, S Selberherr, L Filipovic - Micromachines, 2018 - mdpi.com
Semiconductor device dimensions have been decreasing steadily over the past several
decades, generating the need to overcome fundamental limitations of both the materials …
decades, generating the need to overcome fundamental limitations of both the materials …
Formation and Wet Removal of Organic and Titanium-Containing Residues on Patterned TiN/Porous Low-k Structure
QT Le, E Kesters, F Holsteyns - ECS Journal of Solid State …, 2018 - iopscience.iop.org
The formation of the residues after patterning of a patterned metal hard mask/dielectric stack
was characterized using surface-sensitive methods (attenuated total reflection-Fourier …
was characterized using surface-sensitive methods (attenuated total reflection-Fourier …
Influence of C2F6 Addition to Cl2/Ar Gas on Nanometer-Scale Etch Characteristics of TiN Thin Films Using Inductively Coupled Plasma
JS Choi, DH Cho, ET Lim… - ECS Journal of Solid State …, 2018 - iopscience.iop.org
Micro-and nano-scale patterned TiN thin films were etched in Cl 2/Ar and Cl 2/C 2 F 6/Ar
gases by inductively coupled plasma reactive ion etching. As C 2 F 6 gas was added to the …
gases by inductively coupled plasma reactive ion etching. As C 2 F 6 gas was added to the …