We demonstrate how to spatially localize the formation of octahedral arsenic oxide
microcrystals in selective areas of highly doped n-type GaAs substrates during rapid digital …

In this paper, the development of a soft and selective method to increase the etching rate
and control accurately the etched thickness of Si3N4 material is reported. This technique …

A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed
germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate …

Thin-film solar cells fabricated using the epitaxial lift-off (ELO) process enable considerable
cost reduction as well as light-trapping. A polyimide film was used as a support substrate for …

The results of realization of the method for obtaining A3B5 nanoparticles with the help of ball-
milling and additional liquid-phase etching of the single-crystal material are presented in the …

Актуальність теми. За останні десятиліття нанотехнології стали стратегічним
індустріальним напрямком. У багатьох галузях науки й техніки та сферах промисловості …

The properties of porous GaAs samples produced by the electrochemical etching of single-
crystal n-GaAs (100) wafers are studied by X-ray diffraction analysis, electron microscopy …

We investigated the oxidation behaviour of an amorphous GaAs thin film deposited onto a
micro/nanotextured Si surface by an electron beam. After the deposited film was exposed to …

Для возможности формирования наноструктурированных слоев на поверхности
полупроводников с регулируемыми свойствами разработан морфологический …

Методами рентгеновской дифракции, электронной микроскопии, инфракрасной и
ультрафиолетовой спектроскопии в работе изучены свойства образцов пористого …