Introduction to infrared detectors and quantum dots
S Sengupta, S Chakrabarti, S Sengupta… - Structural, Optical and …, 2018 - Springer
The majority of objects, those with a temperature between 100 and 400 K, emit strong
electromagnetic radiation in the infrared region, especially in 1–14 µm region, which …
electromagnetic radiation in the infrared region, especially in 1–14 µm region, which …
Effect of Rapid-Thermal Annealing on Quantum Dot Properties
S Adhikary, S Chakrabarti, S Adhikary… - Quaternary Capped In …, 2018 - Springer
Abstract The InAs/GaAs quantum dots are grown by SK growth method using molecular
beam epitaxy. As-grown defects are always there in samples. Post-growth rapid thermal …
beam epitaxy. As-grown defects are always there in samples. Post-growth rapid thermal …
S. Mokkapati HH Tan
C Jagadish - VLSI Micro-and Nanophotonics: Science …, 2018 - books.google.com
Chapters. 9,. 10,. 12,. and. 23. of. this. book. have. introduced. the. importance. of. quantum.
dot–based. optoelectronic. devices. and. discussed. in. detail. various. optoelectronic …
dot–based. optoelectronic. devices. and. discussed. in. detail. various. optoelectronic …