US9972504B2 - Atomic layer etching of tungsten for enhanced tungsten deposition fill - Google
Patents US9972504B2 - Atomic layer etching of tungsten for enhanced tungsten deposition fill …

Methods of etching cobalt on substrates are provided. Some methods involve exposing the
substrate to a boron-containing halide gas and an additive, and exposing the substrate to an …

Methods of etching and smoothening films by exposing to a halogen-containing plasma and
an inert plasma within a bias window in cycles are provided. Methods are suitable for …

Methods and apparatuses for patterning carbon-containing material over a layer to be
etched are provided herein. Methods involve trimming carbon-containing material by atomic …

Provided herein are methods of atomic layer etching (ALE) of metals including tungsten (W)
and cobalt (Co). The methods disclosed herein provide precise etch control down to the …

Methods and apparatus for etching substrates using self-limiting reactions based on removal
energy thresholds determined by evaluating the material to be etched and the chemistries …