20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on Silicon
A Tessmann, A Leuther, F Heinz… - IEEE Journal of Solid …, 2019 - ieeexplore.ieee.org
High-gain millimeter-wave monolithic integrated circuit (MMIC) amplifiers have been
developed, based on a planar metamorphic 20-nm gate length InGaAs metal-oxide …
developed, based on a planar metamorphic 20-nm gate length InGaAs metal-oxide …
InGaAs FinFETs 3-D sequentially integrated on FDSOI Si CMOS with record performance
C Convertino, CB Zota, D Caimi… - IEEE Journal of the …, 2019 - ieeexplore.ieee.org
In this paper, we demonstrate InGaAs FinFETs 3-D sequentially (3DS) integrated on top of a
fully depleted silicon-on-insulator CMOS. Top layer III-V FETs are fabricated using a Si …
fully depleted silicon-on-insulator CMOS. Top layer III-V FETs are fabricated using a Si …
Innovative devices in FD-SOI technology
H Park - 2019 - theses.hal.science
The main purpose of this PhD work is to investigate the fundamentals of floating body effects
(FBEs) in recent generations of ultrathin FDSOI devices. Several FBEs,(i) kink effect,(ii) gate …
(FBEs) in recent generations of ultrathin FDSOI devices. Several FBEs,(i) kink effect,(ii) gate …
[引用][C] High-quality epitaxial growth of AlGaInAs-based active structure on a directly-bonded InPoSi substrate
C Besancon, J Decobert, JP Le Goec… - 2019 Compound …, 2019 - ieeexplore.ieee.org
High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a Directly-Bonded InPoSi
Substrate Page 1 High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a …
Substrate Page 1 High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a …