Analytical performance of the threshold voltage and subthreshold swing of CSDG MOSFET
UA Maduagwu, VM Srivastava - Journal of Low Power Electronics and …, 2019 - mdpi.com
In this research work, the threshold voltage and subthreshold swing of cylindrical
surrounding double-gate (CSDG) MOSFET have been analyzed. These analyses are based …
surrounding double-gate (CSDG) MOSFET have been analyzed. These analyses are based …
Comparative analysis of dielectric modulated junctionless FinFET biosensor and junctionless DG MOSFET biosensor for medical instrumentation
In this work, a comprehensive comparative analysis of a junctionless FinFET and a
junctionless double gate (DG) MOSFET as label free biosensor has been carried out …
junctionless double gate (DG) MOSFET as label free biosensor has been carried out …
Analytical modeling and simulation of a fully depleted three-gate silicon MESFET on SOI material
The three-gate (TG) silicon-on-insulator (SOI) metal–semiconductor field-effect transistor
(MESFET) is proposed as an innovative type of device for use in high-density and high …
(MESFET) is proposed as an innovative type of device for use in high-density and high …
A review of nanoscaled bulk double gate and triple gate FETs for low standby power application
A Kumar, JN Roy - … 3rd International Conference on Trends in …, 2019 - ieeexplore.ieee.org
The electrical characteristics of bulk double gate (DG) and triple gate (TG) FETs for low
standby power application are reviewed using various peer reviewed literature. The study is …
standby power application are reviewed using various peer reviewed literature. The study is …
[PDF][PDF] Fully depleted three-gate silicon MESFET on SOI material: analytical modeling and simulation
An innovative type of device for high-density and high-speed applications, three-gate (TG)
SOI-MESFET, is proposed. The new design is expected to exhibit excellent immunity against …
SOI-MESFET, is proposed. The new design is expected to exhibit excellent immunity against …
[PDF][PDF] Design and analytical performance of subthreshold characteristics of CSDG MOSFET.
UA Maduagwu - 2019 - core.ac.uk
1.1 Background The advent of solid-state electronics began with the Bipolar Junction
Transistor (BJT) which was one of the most trending inventions of the 20th century [1]. Over …
Transistor (BJT) which was one of the most trending inventions of the 20th century [1]. Over …