Fabrication and characterization of inverted organic PTB7: PC70BM solar cells using Hf-In-ZnO as electron transport layer
M Ramírez-Como, VS Balderrama, A Sacramento… - Solar Energy, 2019 - Elsevier
In this study, we report the use of Hafnium-Indium-Zinc-Oxide (HIZO) as electron transport
layer (ETL) in inverted organic solar cells (iOSCs) using a bulk heterojunction of Poly ({4, 8 …
layer (ETL) in inverted organic solar cells (iOSCs) using a bulk heterojunction of Poly ({4, 8 …
Mobility enhancement of back-channel-etch amorphous InGaZnO TFT by double layers with quantum well structures
AH Tai, CC Yen, TL Chen, CH Chou… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
The back-channel-etch amorphous InGaZnO (a-IGZO) double-layer thin-film transistor (DL-
TFT) consists of an a-IGZO layer with no oxygen flow (NOF) as a top layer and an a-IGZO …
TFT) consists of an a-IGZO layer with no oxygen flow (NOF) as a top layer and an a-IGZO …
Back-channel-etched oxide thin film transistors with a corrosion resistant crystalline InGaO channel
M Zhao, C Song, Y Xu, D Xu, J Zhang… - ECS Journal of Solid …, 2019 - iopscience.iop.org
A crystalline indium-gallium-oxide (InGaO) was used as the channel of a thin film transistor
(TFT) with back-channel-etched (BCE) structure. The effects of deposition temperature (T) on …
(TFT) with back-channel-etched (BCE) structure. The effects of deposition temperature (T) on …
High-performance back-channel-etch thin-film transistors with zinc tin oxide as barrier layer via spray coating
M Li, D Huang, M Li, W Zhang, H Xu… - … on Electron Devices, 2019 - ieeexplore.ieee.org
Back-channel-etch (BCE) thin-film transistors (TFTs) with the stacked channel of sputtering
InZnO (IZO) and spray coating ZnSnO (ZTO) were fabricated. The spray-coated ZTO film …
InZnO (IZO) and spray coating ZnSnO (ZTO) were fabricated. The spray-coated ZTO film …
Sub-gap defect states in back-channel-etched amorphous In-Ga-Zn-O TFTs studied by photoinduced transient spectroscopy
K Hayashi, M Ochi - 2019 IEEE International Meeting for Future …, 2019 - ieeexplore.ieee.org
We have studied changes of sub-gap defect states in amorphous In-Ga-Zn-O (a-IGZO) thin-
film transistors (TFTs) by means of photoinduced transient spectroscopy (PITS). It is found …
film transistors (TFTs) by means of photoinduced transient spectroscopy (PITS). It is found …
Instability of Transfer and Low Frequency Noise Characteristics under Positive Bias in the InZnO Thin Film Transistors
Y Chen, B Li, Z Wu, YQ Chen - 2019 IEEE International …, 2019 - ieeexplore.ieee.org
In this paper, the positive bias instability is studied in IZO TFTs with the Al 2 O 3 gate oxide.
The variations of the transfer curves and the low-frequency noise characteristics are …
The variations of the transfer curves and the low-frequency noise characteristics are …