Segregation at interfaces in (GaIn) As/Ga (AsSb)/(GaIn) As-quantum well heterostructures explored by atomic resolution STEM

P Kükelhan, S Firoozabadi, A Beyer, L Duschek… - Journal of Crystal …, 2019 - Elsevier
Surface segregation and interaction effects of In and Sb in (GaIn) As/Ga (AsSb)/(GaIn) As-
“W”-type quantum well heterostructures (“W”-QWHs) are investigated by high angle annular …

Control of the nonlinear response of bulk GaAs induced by long-wavelength infrared pulses

D Matteo, J Pigeon, SY Tochitsky, U Huttner, M Kira… - Optics …, 2019 - opg.optica.org
The nonlinear optical response of GaAs is studied using extremely nonresonant 10 μm laser
pulses with peak intensities greater than 2 GW/cm^ 2. We observe over an order of …

Quantitative Scanning Transmission Electron Microscopy for III-V Semiconductor Heterostructures Utilizing Multi-Slice Image Simulations

P Kükelhan - 2019 - archiv.ub.uni-marburg.de
Quantitative STEM can satisfy the demand of modern semiconductor device development for
atomically resolved structural information. Thereby, quantitative evaluations can be based …

[PDF][PDF] III. Enhanced Absorption by Linewidth Narrowing in Optically Excited Type-II Semiconductor Heterostructures

M Stein - Dynamics of Excitons in Semiconductors, 2019 - d-nb.info
We experimentally report a surprising linewidth narrowing of the direct exitonic 1s heavy-
hole transition in a type-II quantum well system. This narrowing, which builds up on a pico-to …

Etude des boites quantiques pour la réalisation d'un laser VECSEL bi-fréquence cohérent

G Brevalle - 2019 - theses.hal.science
Ce travail de thèse porte sur différentes études expérimentales permettant de lier les
performances d'un laser bi-fréquence aux propriétés structurales physiques des boites …