Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers
S Pūkienė, M Karaliūnas, A Jasinskas… - …, 2019 - iopscience.iop.org
Influence of barrier material and structure on carrier quantum confinement in GaAsBi
quantum wells (QWs) is studied comprehensively. Single-and multi-QW structures were …
quantum wells (QWs) is studied comprehensively. Single-and multi-QW structures were …
Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment
R Kudrawiec, J Kopaczek, O Delorme… - Journal of Applied …, 2019 - pubs.aip.org
To determine the band alignment at the GaSb 1-x Bi x/GaSb interface, a set of GaSb 1-x Bi
x/GaSb quantum wells (QWs) of various widths (7, 11, and 15 nm) and contents (Bi≤ 12%) …
x/GaSb quantum wells (QWs) of various widths (7, 11, and 15 nm) and contents (Bi≤ 12%) …
Impact of a small change in growth temperature on the tail states of GaAsBi
K Kakuyama, S Hasegawa, H Nishinaka… - Journal of Applied …, 2019 - pubs.aip.org
The influence of growth temperature (T sub) on the tail states of GaAs 1− x Bi x (0≦ x≦
0.05) was studied via its sub-bandgap absorption and photoluminescence (PL) …
0.05) was studied via its sub-bandgap absorption and photoluminescence (PL) …
Bismuth-induced band-tail states in GaAsBi probed by photoluminescence
Band-tail states in semiconductors reflect the effects of material growth and/or treatment,
affect the performance of optoelectronic applications, and are hence a well-concerned issue …
affect the performance of optoelectronic applications, and are hence a well-concerned issue …
Deep levels analysis in wavelength extended InGaAsBi photodetector
InP based dilute bismide InGaAsBi material is emerging as a promising candidate for
extending short wavelength infrared detection. One critical factor to limit the performance of …
extending short wavelength infrared detection. One critical factor to limit the performance of …
GaSbBi alloys and heterostructures: fabrication and properties
Abstract Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their
properties of bandgap reduction and spin–orbit splitting. The incorporation of Bi into …
properties of bandgap reduction and spin–orbit splitting. The incorporation of Bi into …