[HTML][HTML] AlN-based hybrid thin films with self-assembled plasmonic Au and Ag nanoinclusions
Aluminum nitride (AlN)-based two-phase nanocomposite thin films with plasmonic Au and
Ag nanoinclusions have been demonstrated using a one-step thin film growth method. Such …
Ag nanoinclusions have been demonstrated using a one-step thin film growth method. Such …
EthylenediamineAl (III) chloride: Potential precursor for preparation of AlN materials/thin films
H Chaurasia, SK Tripathi, K Bilgaiyan, NE Prasad - Ceramics International, 2019 - Elsevier
Abstract Tris (ethylenediamine) Al (III) Cl 3 has been used as single-source precursor for the
preparation of bulk AlN and thin films. The precursor is stable for long periods of time and …
preparation of bulk AlN and thin films. The precursor is stable for long periods of time and …
Rigorous statistical thermodynamical model for lattice dynamics in alloys
We propose another approach to overcome the difficulties of previous ab initio methods
used to study lattice dynamics in disordered systems, such as alloys. Group III nitrides and …
used to study lattice dynamics in disordered systems, such as alloys. Group III nitrides and …
[PDF][PDF] Hétérostructures de GaN/Al (Ga) N pour l'optoélectronique infrarouge: orientations polaires et non-polaires
In this chapter, we introduce the basic knowledge on III-nitride semiconductors necessary to
understand, design and realize intersubband devices based on these materials. First, we …
understand, design and realize intersubband devices based on these materials. First, we …