Epitaxial phases of high Bi content GaSbBi alloys

J Hilska, E Koivusalo, J Puustinen… - Journal of Crystal …, 2019 - Elsevier
GaSbBi alloys have recently emerged as attractive materials for mid-infrared optoelectronics
owing to strong band gap reduction enabled by Bi incorporation into the GaSb matrix. The …

Strategic molecular beam epitaxial growth of GaAs/GaAsBi heterostructures and nanostructures

PK Patil, S Shimomura, F Ishikawa, E Luna… - … -Containing Alloys and …, 2019 - Springer
In this chapter, we go over epitaxial growth of bismide thin films, multiple quantum wells, and
nanostructures (nanowires) using molecular beam epitaxy (MBE) and their surface …

Bi kvantinių taškų GaAsBi matricoje tyrimas peršviečiamąja elektronine mikroskopija

M Skapas - 2019 - epublications.vu.lt
Abstract [eng] Bismuth-containing III-V compounds are promising as emitters operating in
the near-and mid-infrared spectrum region. Unfortunately, the growth of laser structures for …

[PDF][PDF] Members of the Jury: Chairman Prof. Dr. Johan Verbeeck, University of Antwerp, Belgium

F Peeters, D Lamoen, B Partoens, P Kelly, H Sahin… - medialibrary.uantwerpen.be
1 Two-dimensional (2D) carbon materials play an important role in nanomaterials. We
propose a new carbon monolayer, named hexagonal-4, 4, 4-graphyne (H4, 4, 4-graphyne) …

Quantum Spin Hall States in 2D Bismuth-Based Materials

G Li, S Wang - Bismuth-Containing Alloys and Nanostructures, 2019 - Springer
Berrys phase, an inherent constituent of the electronic wave functions, has revolutionarily
enriched our understanding of the fundamental states of matter and has triggered the …

[PDF][PDF] Raman Studies in GaAs

G Söm, Ö Erken, D Özaslan, M Günes, C Gümüş - academia.edu
. Also, As content is very high compared to the Bi content so it is anticipated that GaBi-like
mode should be weaker than GaAs-like mode. We may expect GaBi mode intensity …