[HTML][HTML] Uprooting defects to enable high-performance III–V optoelectronic devices on silicon
The monolithic integration of III-V compound semiconductor devices with silicon presents
physical and technological challenges, linked to the creation of defects during the deposition …
physical and technological challenges, linked to the creation of defects during the deposition …
Evaluation of floor-wise pollution status and deposition behavior of potentially toxic elements and nanoparticles in air conditioner dust during urbanistic development
The study was undertaken to investigate deposition behaviors of various size-segregated
particles and indoor air quality using dust accumulated on the air conditioner filter acting as …
particles and indoor air quality using dust accumulated on the air conditioner filter acting as …
Enhanced removal of arsenic and chromium contaminants from drinking water by electrodeposition technique using graphene composites
This work reports the use of compacted graphene composites for the removal of As and Cr
heavy metal ions from contaminated water by electrodeposition. The removal of the metal …
heavy metal ions from contaminated water by electrodeposition. The removal of the metal …
Anodic imprint lithography: Direct imprinting of single crystalline GaAs with anodic stamp
Anodic imprint lithography patterns the GaAs substrate electrochemically by applying a
voltage through a predefined anodic stamp. This newly devised technique performs anodic …
voltage through a predefined anodic stamp. This newly devised technique performs anodic …
Oxide crystals on the surface of porous indium phosphide
YO Suchikova, IT Bogdanov… - Archives of Materials …, 2019 - archivesmse.org
Purpose: f this paper is to is to establish the patterns of oxide formation on the surface of
indium phosphide during electrochemical etching of mono-InP. Design/methodology …
indium phosphide during electrochemical etching of mono-InP. Design/methodology …
A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon
III-V solar cell cost reduction and direct III-V/Si integration can both be realized by depositing
a thin layer of high-quality Ge on relatively low-cost Si substrates. However, direct epitaxial …
a thin layer of high-quality Ge on relatively low-cost Si substrates. However, direct epitaxial …