Giant nonvolatile resistive switching in a Mott oxide and ferroelectric hybrid

P Salev, J Del Valle, Y Kalcheim… - Proceedings of the …, 2019 - National Acad Sciences
Controlling the electronic properties of oxides that feature a metal–insulator transition (MIT)
is a key requirement for developing a new class of electronics often referred to as …

Frustrated Magnetism in Mott Insulating

JC Leiner, HO Jeschke, R Valentí, S Zhang, AT Savici… - Physical Review X, 2019 - APS
V 2 O 3 famously features all four combinations of paramagnetic versus antiferromagnetic
and metallic versus insulating states of matter in response to percent-level doping, pressure …

Solid-phase epitaxy and pressure-induced topotaxy of the VO2 and V2O3 thin films on sapphire using annealing under uniaxial compression

A Matsuda, Y Nozawa, S Kaneko, M Yoshimoto - Applied Surface Science, 2019 - Elsevier
The vanadium oxide thin films of both VO 2 (V 4+) and V 2 O 3 (V 3+) are phase-selectively
synthesized on atomically stepped α-Al 2 O 3 (0001) substrates by pulsed laser deposition …

[PDF][PDF] Electronic, structural and optical phase transitions in strongly correlated oxide thin films grown by molecular beam epitaxy

PH Jara - 2019 - lirias.kuleuven.be
First, I would like to express my gratitude to my promotor Prof. Jean-Pierre Locquet for giving
me the opportunity to join his group and trusting me with such an amazing tool as the oxide …