Electron attachment induced ion transport—Part I: Conductivities and activation energies

A Hein, M Schäfer, KM Weitzel - Solid State Ionics, 2019 - Elsevier
The charge carrier transport in an ion conducting glass has been investigated by means of
the charge attachment induced transport (CAIT) technique. For the first time we describe the …

Electrochemical metallization ReRAMs (ECM)-Experiments and modelling: general discussion

E Ambrosi, P Bartlett, AI Berg, S Brivio, G Burr… - Faraday …, 2019 - pubs.rsc.org
Ella Gale opened discussion of the introductory lecture by Rainer Waser: At the end of your
talk you introduced complementary resistance switches, which you used for binary pattern …

Resistivity control by the electrochemical removal of dopant atoms from a nanodot

W Hiraya, N Mishima, T Shima, S Tai, T Tsuruoka… - Faraday …, 2019 - pubs.rsc.org
Doping impurity atoms into semiconductor materials changes the resistance of the material.
Selecting the atomic species of a dopant and the precise control of the number of dopant …

Decoding the metallic bridging dynamics in nanogap atomic switches

X Ji, KY Pang, R Zhao - Nanoscale, 2019 - pubs.rsc.org
Atomic switches are promising candidates as the basic building blocks for large-scale
neuromorphic networks due to their tunable switching behaviors. Several neuromorphic …

Switching behavior of bulk, fast ion conducting, vitreous AgI‐Ag2O‐MoO3 solids with inert electrode

B Tanujit, GS Varma, S Asokan - Journal of the American …, 2019 - Wiley Online Library
Developing efficient, fast performing and thermally stable Silver iodide‐based fast ion
conducting solids are of great interest for resistive switching applications, but still remain a …

A nano-mechanical device using a Ag2S–C60 system

Y Ishikawa, T Hasegawa… - Japanese journal of …, 2019 - iopscience.iop.org
Electronic circuit elements that show analog resistance change are required for the
development of hardware-based machine learning systems. The energy level of a molecular …

Neuromorphic switching behavior in multi-stacking composed of Pt/graphene oxide/Ag2S/Ag

BK Saika, R Negishi, Y Kobayashi - Japanese Journal of Applied …, 2019 - iopscience.iop.org
The present work reports a modification in the design of the previously known Ag/Ag 2 S
neuron-inspired devices by the addition of a modulating layer of graphene oxide (GO). The …

Current-voltage characteristics of the nanocrystalline silver sulfide

AS Belikov, SV Rempel, AA Rempel - AIP Conference Proceedings, 2019 - elibrary.ru
Conductive properties of pressed nanocrystalline silver sulfide powder with grain size of 67
nm were studied. Presence of additional silver contacts causes increase of conductance …

Особенности вольт-амперной характеристики сульфида серебра

АС Беликов, СВ Ремпель, АА Ремпель - … Технологии. Инновации (ФТИ …, 2019 - elar.urfu.ru
Электронный научный архив УрФУ: Особенности вольт-амперной характеристики сульфида
серебра Skip navigation Главная Просмотреть Разделы и коллекции Посмотреть: По дате …

Voltage- and temperature-dependent electrical behavior of gap-type Ag–Ag2S–Pt atomic switch

MM Aghili Yajadda, X Gao - Applied Physics A, 2019 - Springer
The voltage-and the temperature-dependent electrical behavior of a gap-type Ag–Ag 2 S–Pt
atomic switch is theoretically investigated. The electrical tunnel current passing through the …