Spin–orbit coupling effects on the electronic structure of two-dimensional silicon carbide
Two-dimensional silicon carbide (2D-SiC) has attracted incredible research attention
recently because of its wide bandgap and high exciton binding energy. Here, we focus on …
recently because of its wide bandgap and high exciton binding energy. Here, we focus on …
Anomalous temperature dependent thermal conductivity of two-dimensional silicon carbide
Recently, two-dimensional silicon carbide (2D-SiC) has attracted considerable interest due
to its exotic electronic and optical properties. Here, we explore the thermal properties of 2D …
to its exotic electronic and optical properties. Here, we explore the thermal properties of 2D …
Tunable electronic properties in bismuthene/2D silicon carbide van der Waals heterobilayer
A comprehensive analysis of the structural and electronic properties of a novel 2D
bismuthene and silicon carbide (SiC) van der Waals heterostructure is performed using first …
bismuthene and silicon carbide (SiC) van der Waals heterostructure is performed using first …
Observation of ultrahigh mobility excitons in a strain field by space-and time-resolved spectroscopy at subkelvin temperatures
Y Morita, H Suzuki, K Yoshioka, M Kuwata-Gonokami - Physical Review B, 2019 - APS
We measured basic parameters such as the lifetime, mobility, and diffusion constant of
trapped paraexcitons in Cu 2 O at very low temperatures (below 1 K) using a dilution …
trapped paraexcitons in Cu 2 O at very low temperatures (below 1 K) using a dilution …
[PDF][PDF] 半導体中に光誘起された電子正孔BCS 状態の研究
令和元年 - 2019 - repository.dl.itc.u-tokyo.ac.jp
半導体を光励起すると, 負に帯電した電子と正に帯電した正孔の集団が生成される.
密度が低ければ, 電子と正孔は励起子と呼ばれる束縛状態を作って安定化し …
密度が低ければ, 電子と正孔は励起子と呼ばれる束縛状態を作って安定化し …