Etching substrates using ale and selective deposition

S Tan, J Yu, R Wise, N Shamma, Y Pan - US Patent 10,269,566, 2019 - Google Patents
Methods of and apparatuses for processing substrates having carbon-containing material
using atomic layer deposition and selective deposition are provided. Methods involve …

Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage

D Shen, YJ Wang, RY Tong, V Sundar… - US Patent 10,522,749, 2019 - Google Patents
BACKGROUND A MTJ memory elementis also referred to as a MTJ nanopilarandis a key
componentin magnetic recording devices, andin memory devices Such as magnetoresistive …

Dry plasma etch method to pattern MRAM stack

S Tan, KIM Taeseung, W Yang, J Marks… - US Patent 10,374,144, 2019 - Google Patents
Methods of etching metal by depositing a material reactive with a metal to be etched and a
halogen to form a volatile species and exposing the substrate to a halogen-containing gas …

Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch)

KJ Kanarik, J Marks, H Singh, S Tan… - US Patent …, 2019 - Google Patents
Methods are provided for integrating atomic layer etch and atomic layer deposition by
performing both processes in the same chamber or reactor. Methods involve sequentially …

Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)

KJ Kanarik, J Marks, H Singh, SSH Tan… - US Patent …, 2019 - Google Patents
Methods are provided for integrating atomic layer etch and atomic layer deposition by
performing both processes in the same chamber or reactor. Methods involve sequentially …

Ale smoothness: in and outside semiconductor industry

KJ Kanarik, S Tan, T Lill, M Shen, Y Pan… - US Patent …, 2019 - Google Patents
Methods of etching and smoothening films by exposing to a halogen-containing plasma and
an inert plasma within a bias window in cycles are provided. Methods are suitable for …