The spin-based memory, spin transfer torque-magnetic random access memory (STT-
MRAM), has the potential to enhance the power efficiency of high density memory systems …

To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged
as the real alternative for use as the next generation device for IC fabrication technology …

The authors report on phase resolved optical emission spectroscopy (PROES)
measurements of pulsed capacitive coupled plasmas (CCPs) through argon. The PROES …

Applications such as plasma generation require the generation and delivery of radio-
frequency (rf) power into widely-varying loads while simultaneously demanding high …

In this work, experimental and theoretical study of pulsed discharge in argon has been
carried out. The experimental data on the dynamics of electron density, electron …

Radio frequency inductively coupled plasma sources are widely used in low temperature
industrial processing. Recent computer simulations and experiments indicate significant …

The etch characteristics of Si and TiO 2 nanostructures for optical devices were investigated
using pulse biased inductively coupled plasmas (ICP) with SF 6/C 4 F 8/Ar and BCl 3/Ar …

Pulsed inductively coupled plasmas (ICPs) are widely deployed in the fabrication of
semiconductor devices. Pulse repetition frequencies of up to tens of kHz are commonly used …

Using CH 3 F/O 2/He based chemistries in high density plasmas for silicon nitride spacer
etching, loss of silicon in active source/drain regions of CMOS transistors can be observed …

Pulsing the power to radio frequency (rf) driven plasmas creates transition periods which
exhibit plasma conditions not reachable in continuous wave plasmas. One advantageous …