Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and …

O Donmez, M Aydın, Ş Ardalı, S Yıldırım… - Semiconductor …, 2020 - iopscience.iop.org
We investigate electronic transport properties of as-grown and annealed n-type modulation-
doped Al 0.15 Ga 0.85 As/GaAs 1− x Bi x (x= 0 and 0.04) quantum well (QW) structures …

[HTML][HTML] Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys

T Paulauskas, B Čechavičius, V Karpus… - Journal of Applied …, 2020 - pubs.aip.org
The GaAs 1–x Bi x semiconductor alloy allows one to achieve large bandgap reduction and
enhanced spin–orbit splitting energy at dilute Bi quantities. The bismide is currently being …

Effect of thermal annealing on the optical and structural properties of (311) B and (001) GaAsBi/GaAs single quantum wells grown by MBE

H Alghamdi, VO Gordo, M Schmidbauer… - Journal of Applied …, 2020 - pubs.aip.org
The effect of Furnace Annealing (FA) and Rapid Thermal annealing (RTA) on the structural
and optical properties of GaAs 1− x Bi x/GaAs single quantum wells grown on (001) and …

Effects of Bi incorporation on recombination processes in wurtzite GaBiAs nanowires

B Zhang, M Jansson, PP Chen, XJ Wang… - …, 2020 - iopscience.iop.org
The effects of Bi incorporation on the recombination process in wurtzite (WZ) GaBiAs
nanowires are studied by employing micro-photoluminescence (μ-PL) and time-resolved PL …

Optical properties and dynamics of excitons in Ga (Sb, Bi)/GaSb quantum wells: evidence for a regular alloy behavior

E Rogowicz, WM Linhart, M Syperek… - Semiconductor …, 2020 - iopscience.iop.org
Optical properties and carrier dynamics in 6.6, 10.4, and 14.4 nm wide Ga (Sb, Bi)/GaSb
quantum wells (QWs) with∼ 10%–11% of Bi were studied by photoluminescence (PL), time …