Designer atomic layer etching
KJ Kanarik - US Patent 10,566,212, 2020 - Google Patents
Methods for evaluating synergy of modification and removal operations for a wide variety of
materials to determine process conditions for self-limiting etching by atomic layer etching are …
materials to determine process conditions for self-limiting etching by atomic layer etching are …
GaAs manufacturing processes conditions for micro-and nanoscale devices
High aspect-ratio etchings are a key aspect of the fabrication of III–V semiconductor devices.
The increasing demand for diverse geometries with various characteristic lengths (from the …
The increasing demand for diverse geometries with various characteristic lengths (from the …
Atomic layer etching of tantalum
KJ Kanarik, KIM Taeseung - US Patent 10,566,213, 2020 - Google Patents
Methods for evaluating synergy of modification and removal operations for a wide variety of
materials to determine process conditions for self-limiting etching by atomic layer etching are …
materials to determine process conditions for self-limiting etching by atomic layer etching are …