Abstract Two-dimensional (2D) materials with the conservation of 2D configuration are
excellent candidates for fundamental energy conversion and storage research and potential …

Epitaxial lattice-matched TiN/(Al, Sc) N metal/semiconductor superlattices have attracted
significant interest in recent years for their potential applications in thermionic emission …

High quality high-resolution transmission electron microscopy image was obtained from a
dissociated 60° dislocation near a Ge/Si heterostructure interface. It is observed for the first …

As the semiconductor industry moves beyond the 10 nm node, power consumption
constraints and reduction of the negative impact of parasitic elements become important …

Résumé Les réductions des dimensions des dispositifs CMOS imposent d'introduire de
nouvelles architectures et de nouveaux matériaux dans l'empilement des transistors. Ainsi …

In this work, the fabrication and the electrical characterization of the germanium-based
vertical p-channel planar-doped barrier field-effect transistor is investigated for the first time …

Based on the fact that the avalanche frequency of impact-ionization avalanche transit-time
(IMPATT) diode is proportional to the square-root of DC biasing current density, more DC …