ABSTRACT β-Gallium oxide (β-Ga2O3) is an emerging wide bandgap semiconductor with
potential applications in power and RF electronic systems. Previous theoretical calculation …

The thermoelectric effects in bulk β-gallium oxide crystals are investigated in this work using
the ab initio calculated electron-phonon interactions and semi-classical Boltzmann transport …

Light and matter can strongly mix together to form hybrid particles called polaritons. In recent
years, polaritons in the so-called ultrastrong coupling (USC) regime have attracted much …

For Raman-based carrier concentration determination in thin film semiconductors, above-
band-gap excitation is necessary, as the interference from underlying substrate is eliminated …

We demonstrate quantitatively how values of electron densities in GaAs extracted from
Raman spectra of two samples depend on models used to describe electric susceptibility …

The subwavelength confinement and enhanced electric field created by plasmons allow
precise sensing and enhanced light–matter interaction. However, the high frequency and …