RowHammer is a circuit-level DRAM vulnerability, first rigorously analyzed and introduced in 2014, where repeatedly accessing data in a DRAM row can cause bit flips in nearby rows …
Y Wang, L Orosa, X Peng, Y Guo… - 2020 53rd Annual …, 2020 - ieeexplore.ieee.org
Main memory, composed of DRAM, is a performance bottleneck for many applications, due to the high DRAM access latency. In-DRAM caches work to mitigate this latency by …
Cloud providers are concerned that Rowhammer poses a potentially critical threat to their servers, yet today they lack a systematic way to test whether the DRAM used in their servers …
X Xin, Y Zhang, J Yang - 2020 IEEE International Symposium …, 2020 - ieeexplore.ieee.org
Recently proposed DRAM based memory-centric architectures have demonstrated their great potentials in addressing the memory wall challenge of modern computing systems …
Increasing single-cell DRAM error rates have pushed DRAM manufacturers to adopt on-die error-correction coding (ECC), which operates entirely within a DRAM chip to improve …
DRAM is the prevalent main memory technology, but its long access latency can limit the performance of many workloads. Although prior works provide DRAM designs that reduce …
There are three domains in a modern thermally-constrained mobile system-on-chip (SoC): compute, IO, and memory. We observe that a modern SoC typically allocates a fixed power …
In-situ approaches process data very close to the memory cells, in the row buffer of each subarray. This minimizes data movement costs and affords parallelism across subarrays …
Computers continue to diversify with respect to system designs, emerging memory technologies, and application memory demands. Unfortunately, continually adapting the …