TRRespass: Exploiting the many sides of target row refresh

P Frigo, E Vannacc, H Hassan… - … IEEE Symposium on …, 2020 - ieeexplore.ieee.org
After a plethora of high-profile RowHammer attacks, CPU and DRAM vendors scrambled to
deliver what was meant to be the definitive hardware solution against the RowHammer …

Revisiting rowhammer: An experimental analysis of modern dram devices and mitigation techniques

JS Kim, M Patel, AG Yağlıkçı, H Hassan… - 2020 ACM/IEEE 47th …, 2020 - ieeexplore.ieee.org
RowHammer is a circuit-level DRAM vulnerability, first rigorously analyzed and introduced in
2014, where repeatedly accessing data in a DRAM row can cause bit flips in nearby rows …

Figaro: Improving system performance via fine-grained in-dram data relocation and caching

Y Wang, L Orosa, X Peng, Y Guo… - 2020 53rd Annual …, 2020 - ieeexplore.ieee.org
Main memory, composed of DRAM, is a performance bottleneck for many applications, due
to the high DRAM access latency. In-DRAM caches work to mitigate this latency by …

Are we susceptible to rowhammer? an end-to-end methodology for cloud providers

L Cojocar, J Kim, M Patel, L Tsai… - … IEEE symposium on …, 2020 - ieeexplore.ieee.org
Cloud providers are concerned that Rowhammer poses a potentially critical threat to their
servers, yet today they lack a systematic way to test whether the DRAM used in their servers …

ELP2IM: Efficient and low power bitwise operation processing in DRAM

X Xin, Y Zhang, J Yang - 2020 IEEE International Symposium …, 2020 - ieeexplore.ieee.org
Recently proposed DRAM based memory-centric architectures have demonstrated their
great potentials in addressing the memory wall challenge of modern computing systems …

Bit-exact ECC recovery (BEER): Determining DRAM on-die ECC functions by exploiting DRAM data retention characteristics

M Patel, JS Kim, T Shahroodi… - 2020 53rd Annual …, 2020 - ieeexplore.ieee.org
Increasing single-cell DRAM error rates have pushed DRAM manufacturers to adopt on-die
error-correction coding (ECC), which operates entirely within a DRAM chip to improve …

CLR-DRAM: A low-cost DRAM architecture enabling dynamic capacity-latency trade-off

H Luo, T Shahroodi, H Hassan, M Patel… - 2020 ACM/IEEE 47th …, 2020 - ieeexplore.ieee.org
DRAM is the prevalent main memory technology, but its long access latency can limit the
performance of many workloads. Although prior works provide DRAM designs that reduce …

SysScale: Exploiting multi-domain dynamic voltage and frequency scaling for energy efficient mobile processors

J Haj-Yahya, M Alser, J Kim, AG Yağlıkçı… - 2020 ACM/IEEE 47th …, 2020 - ieeexplore.ieee.org
There are three domains in a modern thermally-constrained mobile system-on-chip (SoC):
compute, IO, and memory. We observe that a modern SoC typically allocates a fixed power …

Fulcrum: A simplified control and access mechanism toward flexible and practical in-situ accelerators

M Lenjani, P Gonzalez, E Sadredini, S Li… - … Symposium on High …, 2020 - ieeexplore.ieee.org
In-situ approaches process data very close to the memory cells, in the row buffer of each
subarray. This minimizes data movement costs and affords parallelism across subarrays …

The virtual block interface: A flexible alternative to the conventional virtual memory framework

N Hajinazar, P Patel, M Patel… - 2020 ACM/IEEE 47th …, 2020 - ieeexplore.ieee.org
Computers continue to diversify with respect to system designs, emerging memory
technologies, and application memory demands. Unfortunately, continually adapting the …