Characteristics of etching residues on the upper sidewall after anisotropic plasma etching of silicon
J Lee, HW Lee, KH Kwon - Applied Surface Science, 2020 - Elsevier
Anisotropic Si nano-trench structures were fabricated using inductively coupled HBr+ Cl 2
plasmas for sidewall etching residue analysis. The sidewall etching residues formed inside …
plasmas for sidewall etching residue analysis. The sidewall etching residues formed inside …
Transients using low-high pulsed power in inductively coupled plasmas
C Qu, SK Nam, MJ Kushner - Plasma Sources Science and …, 2020 - iopscience.iop.org
Pulsed inductively coupled plasmas (ICPs) are widely deployed in the fabrication of
semiconductor devices. Pulse repetition frequencies of up to tens of kHz are commonly used …
semiconductor devices. Pulse repetition frequencies of up to tens of kHz are commonly used …