Effect of thermal annealing on the optical and structural properties of (311) B and (001) GaAsBi/GaAs single quantum wells grown by MBE
The effect of Furnace Annealing (FA) and Rapid Thermal annealing (RTA) on the structural
and optical properties of GaAs 1− x Bi x/GaAs single quantum wells grown on (001) and …
and optical properties of GaAs 1− x Bi x/GaAs single quantum wells grown on (001) and …
[PDF][PDF] Photoluminescence and Raman scattering of GaAs
Photoluminescence (PL) and Raman spectra of GaAs1-xBix samples grown at different rates
(0.09 to 0.5 µm/h) were investigated. The PL peak wavelength initially redshifted with the …
(0.09 to 0.5 µm/h) were investigated. The PL peak wavelength initially redshifted with the …
GaAsPBi epitaxial layer grown by molecular beam epitaxy
C Himwas, A Soison, S Kijamnajsuk… - Semiconductor …, 2020 - iopscience.iop.org
GaAsPBi is a new class of quaternary III–V compounds that extends the concept of band gap
engineering on GaAs with potentials for lattice matching and excellent temperature stability …
engineering on GaAs with potentials for lattice matching and excellent temperature stability …
[图书][B] Novel III-V Active Regions by Metal-Organic Vapor Phase Epitaxy for Semiconductor Laser Diodes
H Kim - 2020 - search.proquest.com
This work summarizes the epitaxial growth by metal-organic vapor phase epitaxy (MOVPE)
and the subsequent device characterizations for III-V semiconductor laser diodes, emitting in …
and the subsequent device characterizations for III-V semiconductor laser diodes, emitting in …