Physics and applications of quantum dot lasers for silicon photonics
Photonic integrated circuits (PICs) have enabled numerous high performance, energy
efficient, and compact technologies for optical communications, sensing, and metrology …
efficient, and compact technologies for optical communications, sensing, and metrology …
Self‐assembled InAs/GaAs coupled quantum dots for photonic quantum technologies
C Jennings, X Ma, T Wickramasinghe… - Advanced Quantum …, 2020 - Wiley Online Library
Coupled quantum dots (CQDs) that consist of two InAs QDs stacked along the growth
direction and separated by a relatively thin tunnel barrier have been the focus of extensive …
direction and separated by a relatively thin tunnel barrier have been the focus of extensive …
Polarization-insensitive fiber-to-fiber gain of semiconductor optical amplifier using closely stacked InAs/GaAs quantum dots
T Kaizu, T Kakutani, K Akahane… - Japanese Journal of …, 2020 - iopscience.iop.org
The gain characteristics of a semiconductor optical amplifier (SOA) that contains forty layers
of closely stacked InAs/GaAs quantum dots (QDs) were studied by employing a fiber-to-fiber …
of closely stacked InAs/GaAs quantum dots (QDs) were studied by employing a fiber-to-fiber …
Role of Sb on the vertical-alignment of type-II strain-coupled InAs/GaAsSb multi quantum dots structures
Abstract The implementation of GaAs 0.8 Sb 0.2 as CL to obtain type-II strain-coupled InAs
MQD structures has been examined and compared to similar structures without Sb or …
MQD structures has been examined and compared to similar structures without Sb or …
Formation mechanisms of agglomerations in high-density InAs/GaAs quantum dot multi-layer structures
The study explores phenomena that occur during the growth of multi-stacked quantum dots
(MQD) InAs layers using thin GaAs spacers. An arrangement of plastically relaxed …
(MQD) InAs layers using thin GaAs spacers. An arrangement of plastically relaxed …
[PDF][PDF] Ladungsträger-Annihilationsdynamik von gekoppelten zwei-und nulldimensionalen Elektronensystemen
C Ebler - 2020 - hss-opus.ub.ruhr-uni-bochum.de
Durch das stete Bestreben der Menschheit nach besseren Rechenmaschinen und
schnellerer Datenkommunikation war es in der Vergangenheit ein probates Mittel, die …
schnellerer Datenkommunikation war es in der Vergangenheit ein probates Mittel, die …
[PDF][PDF] Active manipulation of the g-tensor in semiconductor nanostructures
HMGA Tholen - 2020 - research.tue.nl
Cover art: strain profile on the cross-sectional plane of a nanowire quantum dot calculated in
Chapter 6 (Fig. 6.2). The background is a pattern of alternating electron and hole …
Chapter 6 (Fig. 6.2). The background is a pattern of alternating electron and hole …
[PDF][PDF] Theoretical Modeling and Simulation of Electronic Band Structure and Properties of InAs/GaAs Superlattice
HI Ikeri, AI Onyia, PU Asogwa - Int. J. Sci. Res. in Physics and …, 2020 - researchgate.net
Accepted: 15/Oct/2020, Online: 31/Oct/2020 Abstract—Theoretical modeling of the electronic
band structure and simulation results of InAs/GaAs quantum dots superlattices (QDSL) is …
band structure and simulation results of InAs/GaAs quantum dots superlattices (QDSL) is …
Deterministic tunnel barriers in 1D quantum electronic systems
F Thomas - 2020 - edoc.unibas.ch
In this thesis, we investigate the formation of tunnel barriers in one-dimensional
semiconductors by means of low temperature transport experiments. The aim of this thesis is …
semiconductors by means of low temperature transport experiments. The aim of this thesis is …