Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells
Intermediate band solar cells hold the promise of ultrahigh power conversion efficiencies
using a single semiconductor junction. Many current implementations use materials with …
using a single semiconductor junction. Many current implementations use materials with …
Comparative Analysis of the Optical and Physical Properties of InAs and In0.8Ga0.2As Quantum Dots and Solar Cells Based on them
RA Salii, SA Mintairov, AM Nadtochiy, VN Nevedomskii… - Semiconductors, 2020 - Springer
Abstract InAs and In 0.8 Ga 0.2 As quantum dots in a GaAs matrix as well as GaAs solar
cells with quantum dots of both types in the i-region are obtained by metalorganic vapor …
cells with quantum dots of both types in the i-region are obtained by metalorganic vapor …
Design and modelling of InGaP/GaSb tandem cell with embedded 1D GaAs quantum superlattice
G Shankar Sahoo… - IET Circuits, Devices & …, 2020 - Wiley Online Library
The lower photo‐generated current in a top cell limits the performance of the tandem solar
cell by restricting the short circuit current density. To overcome this, the top cell must be …
cell by restricting the short circuit current density. To overcome this, the top cell must be …
Сравнительный анализ оптических и физических свойств квантовых точек InAs, InGaAs и фотоэлектрических преобразователей на их основе
РА Салий, СА Минтаиров, АМ Надточий… - Физика и техника …, 2020 - mathnet.ru
Методом металлоорганической газофазной эпитаксии получены квантовые точки InAs
и In $ _ {0.8} $ Ga $ _ {0.2} $ As в матрице GaAs, а также GaAs-фотопреобразователи с …
и In $ _ {0.8} $ Ga $ _ {0.2} $ As в матрице GaAs, а также GaAs-фотопреобразователи с …