A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020 - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

[HTML][HTML] Non–zero-crossing current-voltage hysteresis behavior in memristive system

B Sun, M Xiao, G Zhou, Z Ren, YN Zhou… - Materials Today Advances, 2020 - Elsevier
Since the memristor was theoretically predicted at 1971, the research on memristor and
memristive behavior has attracted great interest. However, there is a debate about the …

Capacitive effect: An original of the resistive switching memory

G Zhou, Z Ren, B Sun, J Wu, Z Zou, S Zheng, L Wang… - Nano Energy, 2020 - Elsevier
Interplay between ions and electrons endows memristor with promising applications from
the high density storages, memory logic gates to neuromorphic chips. The interplay-induced …

Design of defect-chemical properties and device performance in memristive systems

M Lübben, F Cüppers, J Mohr, M von Witzleben… - Science …, 2020 - science.org
Future development of the modern nanoelectronics and its flagships internet of things,
artificial intelligence, and neuromorphic computing is largely associated with memristive …

Water-mediated ionic migration in memristive nanowires with a tunable resistive switching mechanism

G Milano, F Raffone, M Luebben… - … applied materials & …, 2020 - ACS Publications
Memristive devices based on electrochemical resistive switching effects have been
proposed as promising candidates for in-memory computing and for the realization of …

Photo-tunable organic resistive random access memory based on PVP/N-doped carbon dot nanocomposites for encrypted image storage

Y Lin, X Zhang, X Shan, T Zeng, X Zhao… - Journal of Materials …, 2020 - pubs.rsc.org
Optoelectronic resistive switching (RS) devices are attracting attention due to their promising
potential in optical communication technology. In this study, a photo-tunable organic …

Review of resistive switching mechanisms for memristive neuromorphic devices

R Yang - Chinese Physics B, 2020 - iopscience.iop.org
Memristive devices have attracted intensive attention in developing hardware neuromorphic
computing systems with high energy efficiency due to their simple structure, low power …

Passive filters for nonvolatile storage based on capacitive-coupled memristive effects in nanolayered organic–inorganic heterojunction devices

S Ranjan, B Sun, G Zhou, YA Wu, L Wei… - ACS Applied Nano …, 2020 - ACS Publications
It is well-known that the reprogrammable device is one of the important needs for circuit
design. In this paper, nanolayered TiO2 and maple leaves (ML) are combined to form a …

Electric field induced charge migration and formation of conducting filament during resistive switching in electrochemical metallization (ECM) memory cells

A Roy, PR Cha - Journal of Applied Physics, 2020 - pubs.aip.org
Although it has been commonly accepted that resistive random access memories (ReRAMs)
operate by exploiting the electric field to form or break the conducting filaments (CFs), the …

Nanostructure- and Orientation-Controlled Resistive Memory Behaviors of Carbohydrate-block-Polystyrene with Different Molecular Weights via Solvent Annealing

TH Chuang, YC Chiang, HC Hsieh… - … applied materials & …, 2020 - ACS Publications
We report the resistive electrical memory characteristics controlled by the self-assembled
nanostructures of maltoheptaose-block-polystyrene (MH-b-PS) block copolymers, where the …