Etch characteristics of Si and TiO2 nanostructures using pulse biased inductively coupled plasmas
SG Kim, KC Yang, YJ Shin, KN Kim, DW Kim… - …, 2020 - iopscience.iop.org
The etch characteristics of Si and TiO 2 nanostructures for optical devices were investigated
using pulse biased inductively coupled plasmas (ICP) with SF 6/C 4 F 8/Ar and BCl 3/Ar …
using pulse biased inductively coupled plasmas (ICP) with SF 6/C 4 F 8/Ar and BCl 3/Ar …